s m d ty p e s m d ty p e t hyri st o r 1 w w w . ke x in . com . c n low pow er use non-insulated t y p e,glass passiv ation ty pe cr08 a s f ea tu r e s i t ( a v ) : 0 . 8 a v d r m : 40 0 v / 60 0 v i g t : 1 0 0 a a b s o lu t e m a x i m u m ra t in g s t a = 2 5 t i n u 2 1 - s a 8 0 r c 8 - s a 8 0 r c l o b m y s r e t e m a r a p v e g a t l o v e s r e v e r k a e p e v i t i t e p e r r r m 4 0 0 6 0 0 v v e g a t l o v e s r e v e r k a e p e v i t i t e p e r - n o n r s m 5 0 0 7 2 0 v v e g a t l o v e s r e v e r c d r ( d c ) 3 2 0 4 8 0 v v 1 * e g a t l o v e t a t s - f f o k a e p e v i t i t e p e r d r m 4 0 0 6 0 0 v v 1 * e g a t l o v e t a t s - f f o c d d ( d c ) 3 2 0 4 8 0 v r m s o n - s t a t e c urre n t i t ( r m s ) a i t n e r r u c e t a t s - n o e g a r e v a t ( a v ) a i t n e r r u c e t a t s - n o e g r u s t s m a i 2 t f o r f u s i n g i 2 a t 2 s p e a k g a t e p o w e r d i s s i p a t i o n p g m w a v era g e g a t e p o w e r d i s s i p a t i o n p g ( a v ) w v e g a t l o v d r a w r o f e t a g k a e p f g m v p e a k g a t e reve r s e v o l t a g e v rgm v p e a k g a t e f o r w a r d c urre n t i f g m a j u n c t i o n t e m p e r a t u r e t j s t ora g e t e m per a t u r e t s tg *1 w i t h g a t e - t o - c a t ho d e r e s i s t a n c e r g k = 1 k 0 . 3 - 4 0 t o + 1 2 5 - 4 0 t o + 1 2 5 0 . 5 0 . 1 6 6 1 . 2 6 0 . 8 1 0 0 . 4 2 1.gate 2.anode 3.cathode 1.70 0.1 0.42 0.1 0.46 0.1
2 s m d ty p e t hyri st o r w w w . kexin . com . c n e l e c t r i c a l ch a r a c t e r i s ti c s t a = 2 5 t i n u x a m . p y t n i m s n o ti i d n o c t s e t l o b m y s r e t e m a r a p rep e t i t i v e pe a k reve r s e c urre n t i r r m t j = 1 2 5 , v r r m ap p li e d , r g k = 1 k 0 . 5 m a r e p e t i t i v e p e a k o f f - s t a t e c u r r e n t i d r m t j = 1 2 5 , v d r m ap p li e d , r g k = 1 k 0 . 5 m a v e g a t l o v e t a t s - n o t m t a = 2 5 , i t m = 2 . 5 a , i n s t a n t aneo u s v a l u e 1 . 5 v v e g a t l o v r e g g i r t e t a g g t t a = 2 5 , v d = 6 v , i t = 0 . 1 a *1 0 . 8 v v e g a t l o v r e g g i r t - n o n e t a g g d t j =1 2 5 , v d = 1 / 2 v d r m , r g k = 1 k 0 . 2 v i t n e r r u c r e g g i r t e t a g g t tj=25 , v d = 6 v , i t = 0 . 1 a *1 1 1 0 0 * 2 a i t n e r r u c g n i d l o h h tj=25 , v d = 1 2 v , r g k = 1 k 1 . 5 3 m a r e c n a t s i s e r l a m r e h t t h ( j - a ) 5 6 t n e i b m a o t n o i t c n u j w * 1 i g t , v g t m e a s ur e m e n t c i r c u i t . * 2 i f s p e c i a l v a l u e s o f i g t a r e req u i re d , c ho o s e a t l e a s t t w o i t e m s f r o m t h o s e li s t e d i n t h e t a b l e b e l o w . i t e m a b c i g t ( a ) 1 t o 3 0 2 0 t o 5 0 4 0 t o 1 0 0 cr08a s m a r k i n g n o . c r o 8 a s - 8 cr o 8 a s - 1 2 m a r k i n g a d a f 10 0 2 3 5 7 10 1 4 2 2 3 5 7 10 2 4 4 6 8 10 3 1 5 7 9 0 5 4 1 0 2 3 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ?1 t a = 25c maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz)
sm d t yp e thyristo r 3 ww w .kexin.com.c n cr08 a s 10 2 10 ?2 10 0 10 1 7 5 3 2 10 ?1 7 5 3 2 10 0 7 5 3 2 7 5 3 2 10 ?2 2 3 5 7 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 2 3 10 ?1 v fgm = 6v v gt = 0.8v i gt = 100 a (t j = 25c) p gm = 0.5w p g(av) = 0.1w v gd = 0.2v i fgm = 0.3a 160 60 ?20 ?40 0 20 40 80 100 120 140 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 typical example 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 120 ?40 ?20 20 80 0.2 0.5 0.9 0 60 40 100 typical example distribution 1.6 1.2 0.6 0.4 0.2 1.4 1.0 0.8 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 360 = 30 60 120 90 180 resistive, inductive loads maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance (c/ w) time (s) allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (c) average on-state current (a) gate trigger voltage vs. junction temperature gate trigger voltage ( v ) junction temperature (c) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (c) 2 3 10 0 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 10 1 2 3 10 ?3 5 7 10 ?2 2 3 5 7 10 ?1 2 3 5 7 10 0 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 aluminum board with soldering 25 25 t0.7 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 = 30 60 120 90 180 360 resistive, inductive loads natural convection aluminum board with soldering 25 25 t0.7 gate characteristics 100 (%) gate trigger current (t j = tc) gate trigger current (t j = 25c)
sm d t yp e thyristo r cr08 a s 4 ww w .kexin.com.c n allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (c) average on-state current (a) 160 120 60 40 20 140 100 80 0 0.8 0 0.2 0.4 0.6 0.7 0.1 0.3 0.5 360 = 180 65c/ w 90c/ w r th( j ? a) = 200c/ w natural convection resistive, inductive loads 160 120 60 40 20 140 100 80 0 160 ?40 0 40 80 120 140 ?20 20 60 100 r gk = 1k? typical example 1.6 1.2 0.6 0.4 0.2 1.4 1.0 0.8 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 = 30 60 120 90 180 360 resistive loads 1.6 1.2 0.6 0.4 0.2 1.4 1.0 0.8 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 = 30 60 120 90 180 270 dc 360 resistive, inductive loads maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase full wave) ambient temperature (c) average on-state current (a) maximum average power dissipation (rectangular wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (rectangular wave) ambient temperature (c) average on-state current (a) breakover voltage vs. junction temperature junction temperature (c) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c ) 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 360 = 30 120 90 180 60 resistive loads natural convection aluminum board with soldering 25 25 t0.7 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 dc = 30 120 180 270 60 90 360 resistive, inductive loads natural convection aluminum board with soldering 25 25 t0.7
sm d t yp e thyristo r cr08 a s 5 ww w .kexin.com.c n 10 1 10 0 10 2 4.0 0 2.0 2.5 3.0 3.5 1.0 1.5 0.5 2 3 10 ?1 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 2 0 80 100 120 40 60 20 typical example t j = 125c breakover voltage vs. gate to cathode resistance gate to cathode resistance (k ?) 100 (%) breakover voltage ( r gk = r k ? ) breakover voltage ( r gk = 1k ? ) 2 3 10 0 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 160 0 80 100 120 140 40 60 20 t j = 125c r gk = 1k? typical example 2 3 10 ?1 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 2 500 0 300 400 100 200 10 0 2 3 10 ?1 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 2 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ?1 v d = 100v r l = 47? r gk = 1k? t a = 25c typical example 60 ?20 ?40 ?60 0 20 40 80 100 120 140 10 1 7 5 3 2 10 0 7 5 3 2 10 ?1 7 5 3 2 10 ?2 holding current vs. junction temperature holding current (ma) junction temperature (c) holding current vs. gate to cathode resistance gate to cathode resistance (k ?) 100 (%) holding current ( r gk = r k ? ) holding current ( r gk = 1k ? ) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv / d t = v v / s ) breakover voltage ( dv / d t = 1 v / s ) turn-on time vs. gate current turn-on time ( s) gate current (ma) holding current vs. gate trigger current holding current (ma) gate trigger current ( a) distribution i gt (25c) = 35 a r gk = 1k? typical example # 1 t j = 25c t j = 25c typical example i gt (25c) i h (1k?) # 1 25 a 0.9ma
sm d t yp e thyristo r cr08 a s 6 ww w .kexin.com.c n 40 30 15 10 5 35 25 20 0 160 0 40 80 120 140 20 60 100 v d = 50v, v r = 50v i t = 2a, r gk = 1k? typical example distribution turn-off time vs. junction temperature turn-off time ( s) junction temperature (c) 160 120 100 40 60 20 0 160 ?40 ?20 20 80 140 120 80 140 0 60 40 100 typical example gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current ( t w ) gate trigger current ( dc ) repetitive peak reverse voltage vs. junction temperature junction temperature (c) thermal impedance vs. board dimensions thermal impedance (c/ w) board dimensions (mm) regular square one side 320 240 120 80 40 280 200 160 0 80 0 20 40 60 70 10 30 50 t0.7 aluminum board without epoxy plate 1010 epoxy plate with copper foil 100 (%) repetitive peak reverse voltage (t j = t c ) repetitive peak reverse voltage (t j = 25 c ) 10 2 10 0 10 1 2 4 3 5 7 10 2 2 4 3 5 7 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 t j = 25c typical example i gt (dc) # 1 10 a # 2 65 a # 1 # 2
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